HUR1620CT symbol t est conditions maxim um ratings unit i frms i f a vm t c =150 o c; rectangular , d=0.5 35 2 x 8 a t vj t vjm t stg -55...+175 175 -55...+150 o c i fsm t vj =45 o c; t p =10ms (50hz), sine e as t vj =25 o c; non-repetitiv e; i as =2a; l=180uh v a =1.5 . v r typ .; f=10khz; repetitiv e 80 0.5 0.2 a mj i ar a p tot t c =25 o c m d mounting torque typical 60 0.4...0.6 2 w nm w eight g high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode HUR1620CT v rsm v 200 v rrm v 200 dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 dimensions t o-220ab a=anode , c=cathode , t ab=cathode a a c c(tab) a c a
HUR1620CT ad v ant a ges * a v alanche v oltage r ated f or reliab le oper ation * soft re v erse reco v er y f or lo w emi/rfi * lo w i rm reduces: - p o w er dissipation within the diode - t ur n-on loss in the comm utating s witch applica tions * antipar allel diode f or high frequency s witching de vices * antisatur ation diode * sn ub ber diode * f ree wheeling diode in con v er ters and motor control circuits * rectifiers in s witch mode po w er supplies (smps) * inductiv e heating * uninterr uptib le po w er supplies (ups) * ultr asonic cleaners and w elders fea tures * inter national standard pac kage * planar passiv ated chips * v er y shor t reco v er y time * extremely lo w s witching losses * lo w i rm -v alues * soft reco v er y beha viour symbol t est conditions characteristic v alues typ. max. unit t vj =25 o c; v r =v rrm t vj =150 o c; v r =v rrm 50 0.2 ua ma i r r thjc r thch 2.5 k/w t rr i f =1a; -di/dt=50a/us; v r =30v ; t vj =25 o c ns i rm v r =100v ; i f =10a; -di f /dt=100a/us; t vj =100 o c 4.1 a i f =8a; t vj =150 o c t vj =25 o c 0.94 1.30 v v f 0.5 25 high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode
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